{"id":84,"date":"2013-06-18T12:24:18","date_gmt":"2013-06-18T10:24:18","guid":{"rendered":"http:\/\/wihmo.de\/nanotech\/?page_id=84"},"modified":"2015-04-15T11:47:28","modified_gmt":"2015-04-15T09:47:28","slug":"fotos-3","status":"publish","type":"page","link":"https:\/\/nanotech-nrw.de\/?page_id=84","title":{"rendered":"Bilder"},"content":{"rendered":"<ul>\n<li>REM-Aufnahme eines Templats f\u00fcr Einzelnanopartikeltransistoren mit einer Kanall\u00e4nge von ca. 80nm<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"REM-Aufnahme\" href=\"https:\/\/nanotech-nrw.de\/?page_id=240\"><img decoding=\"async\" class=\"aligncenter\" alt=\"REM_ZnO_EPT_ICA_Al_1000x_Glass_klein\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/REM_ZnO_EPT_ICA_Al_1000x_Glass_klein.png\" \/><\/a><\/p>\n<ul>\n<li>Inverterschaltungen mit ZnO-Nanopartikeln auf Glassubstrat<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"Inverterschaltungen\" href=\"https:\/\/nanotech-nrw.de\/?page_id=245\"><img decoding=\"async\" class=\"aligncenter\" alt=\"SNC00240c_klein\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/SNC00240c_klein.png\" \/><\/a><\/p>\n<ul>\n<li>Inverter und D\u00fcnnfilmtransistoren mit ZnO-Nanopartikeln auf Glassubstrat<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"Inverter und D\u00fcnnfilmtransistoren\" href=\"https:\/\/nanotech-nrw.de\/?page_id=248\"><img decoding=\"async\" class=\"aligncenter\" alt=\"Glaswafer_ZnOTFT_klein\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/Glaswafer_ZnOTFT_klein.png\" \/><\/a><\/p>\n<ul>\n<li>Kennlinien eines Inverters mit Transistorlast; bei den Transistoren handelt es sich um TFT mit ZnO-Nanopartikeln<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"Kennlinien eines Inverters mit Transistorlast\" href=\"https:\/\/nanotech-nrw.de\/?page_id=251\"><img decoding=\"async\" class=\"aligncenter\" alt=\"Inverter_klein\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/Inverter_klein.png\" \/><\/a><\/p>\n<ul>\n<li>Transfer- und Ausgangskennlinienfelder eines ZnO-Nanopartikeld\u00fcnnfilmtransistors<\/li>\n<\/ul>\n<p><a title=\"ZnO-Nanopartikeld\u00fcnnfilmtransistors\" href=\"https:\/\/nanotech-nrw.de\/?page_id=254\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter\" alt=\"Kennlinien_ZnOTFT_klein\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/Kennlinien_ZnOTFT_klein.png\" width=\"286\" height=\"102\" \/><\/a><\/p>\n<ul>\n<li>Crystalline silicon structure with 80 nm width at the top and about 800 nm height<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"Crys_Si\" href=\"https:\/\/nanotech-nrw.de\/?page_id=137\"><img loading=\"lazy\" decoding=\"async\" width=\"168\" height=\"137\" class=\" wp-image-47 aligncenter\" alt=\"Cryst_Si_1_Thumb\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/Cryst_Si_1_Thumb.gif\" \/><\/a><\/p>\n<ul>\n<li>60 nm polysilicon gate structure with the nitride mask on top<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"Poly_SI\" href=\"https:\/\/nanotech-nrw.de\/?page_id=141\"><img loading=\"lazy\" decoding=\"async\" width=\"178\" height=\"126\" class=\" wp-image-46 aligncenter\" alt=\"Poly_Si_1_Thumb\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/Poly_Si_1_Thumb.gif\" \/><\/a><\/p>\n<ul>\n<li>At left a cross section of an oxide structure of 30 nm width on top of a silicon wafer, right top the oxide rings, and right bottom, cross section of an oxide ring structure on silicon substrate<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"Wafer_SI\" href=\"https:\/\/nanotech-nrw.de\/?page_id=145\"><img loading=\"lazy\" decoding=\"async\" width=\"172\" height=\"135\" class=\" wp-image-48 aligncenter\" alt=\"Wafer_Si_1_Thumb\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/Wafer_Si_1_Thumb.gif\" \/><\/a><\/p>\n<ul>\n<li>Aluminum line, structured by deposition of PECVD layers<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"Alu_line\" href=\"https:\/\/nanotech-nrw.de\/?page_id=149\"><img loading=\"lazy\" decoding=\"async\" width=\"154\" height=\"106\" class=\" wp-image-49 aligncenter\" alt=\"Alu_line_Thumb\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/Alu_line_Thumb.gif\" \/><\/a><\/p>\n<ul>\n<li>Nanometer scale tungsten line on a 40 nm thick silicon oxide film<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"SIO\" href=\"https:\/\/nanotech-nrw.de\/?page_id=152\"><img loading=\"lazy\" decoding=\"async\" width=\"161\" height=\"124\" class=\" wp-image-50 aligncenter\" alt=\"SiO_Thumb\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/SiO_Thumb.gif\" \/><\/a><\/p>\n<ul>\n<li>MoSi2 line with an oxide mask still on top<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"MoSi\" href=\"https:\/\/nanotech-nrw.de\/?page_id=155\"><img loading=\"lazy\" decoding=\"async\" width=\"175\" height=\"145\" class=\" wp-image-51 aligncenter\" alt=\"MoSi_Thumb\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/MoSi_Thumb.gif\" \/><\/a><\/p>\n<ul>\n<li>TiN line with an oxide mask still on top. The front end of the line is modified by thermal heating of the electron beam in the microscope Nanostructures printed in resist by imprint technique<\/li>\n<\/ul>\n<p style=\"text-align: center;\"><a title=\"TiN\" href=\"https:\/\/nanotech-nrw.de\/?page_id=158\"><img loading=\"lazy\" decoding=\"async\" width=\"172\" height=\"118\" class=\" wp-image-52 aligncenter\" alt=\"TiN_Thumb\" src=\"https:\/\/nanotech-nrw.de\/wp-content\/uploads\/2013\/06\/TiN_Thumb.gif\" \/><\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>REM-Aufnahme eines Templats f\u00fcr Einzelnanopartikeltransistoren mit einer Kanall\u00e4nge von ca. 80nm Inverterschaltungen mit ZnO-Nanopartikeln auf Glassubstrat Inverter und D\u00fcnnfilmtransistoren mit ZnO-Nanopartikeln auf Glassubstrat Kennlinien eines Inverters mit Transistorlast; bei den Transistoren handelt es sich um TFT mit ZnO-Nanopartikeln Transfer- und &hellip; <a href=\"https:\/\/nanotech-nrw.de\/?page_id=84\">Weiterlesen <span class=\"meta-nav\">&rarr;<\/span><\/a><\/p>\n","protected":false},"author":3,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-84","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/nanotech-nrw.de\/index.php?rest_route=\/wp\/v2\/pages\/84","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/nanotech-nrw.de\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/nanotech-nrw.de\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/nanotech-nrw.de\/index.php?rest_route=\/wp\/v2\/users\/3"}],"replies":[{"embeddable":true,"href":"https:\/\/nanotech-nrw.de\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=84"}],"version-history":[{"count":16,"href":"https:\/\/nanotech-nrw.de\/index.php?rest_route=\/wp\/v2\/pages\/84\/revisions"}],"predecessor-version":[{"id":321,"href":"https:\/\/nanotech-nrw.de\/index.php?rest_route=\/wp\/v2\/pages\/84\/revisions\/321"}],"wp:attachment":[{"href":"https:\/\/nanotech-nrw.de\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=84"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}